首页   按字顺浏览 期刊浏览 卷期浏览 Investigations of dry etching in AlGaInP/GaInP using CCl2F2/Ar reactive ion etching and...
Investigations of dry etching in AlGaInP/GaInP using CCl2F2/Ar reactive ion etching and Ar ion beam etching

 

作者: J. Hommel,   M. Moser,   M. Geiger,   F. Scholz,   H. Schweizer,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 3526-3529

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585837

 

出版商: American Vacuum Society

 

关键词: ETCHING;ALUMINIUM PHOSPHIDES;GALLIUM PHOSPHIDES;INDIUM PHOSPHIDES;PHOTOLUMINESCENCE;ARGON;FLUORINATED ALIPHATIC HYDROCARBONS;DAMAGE;HETEROSTRUCTURES;QUATERNARY COMPOUNDS;TERNARY COMPOUNDS

 

数据来源: AIP

 

摘要:

We report on investigations of dry etching in GaInP/AlGaInP. As a method of dry etching we used CCl2F2/Ar reactive ion etching (RIE) and Ar ion beam etching (IBE). The suitability of these two methods for microstructure technology with respect to etch rates in investigated. First data on damage resulting from application of these two dry etching techniques in GaInP/AlGaInP are presented. The degree of damage was detected by performing photoluminescence measurement.

 

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