Improved photoluminescence properties of highly strained InGaAs/GaAs quantum wells grown by molecular‐beam epitaxy
作者:
Makoto Kudo,
Tomoyoshi Mishima,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 3
页码: 1685-1688
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.360265
出版商: AIP
数据来源: AIP
摘要:
Highly strained InxGa1−xAs/GaAs quantum well structures on GaAs substrates were grown by molecular‐beam epitaxy. Even with high In composition (0.4 or higher), sharp spectra were obtained from samples grown at 400 °C due to the reduction of In surface segregation. The full width at half maximum of the photoluminescence spectrum from a 6.4‐nm‐thick (21 monolayers) In0.42Ga0.58As/GaAs single quantum well at 77 K and at room temperature was only 9.78 and 18.4 meV, respectively. The peak wavelength of this sample at room temperature was 1.223 &mgr;m. The theoretically calculated peak wavelengths, using a finite square‐well model are in good agreement with the experimental ones over a wide In composition range (between 0.14 and 0.44), and with well widths between 6 and 53 monolayers. This study suggests that the performance of pseudomorphic devices can be improved by using high‐quality InxGa1−xAs layers with high In composition pseudomorphically grown on GaAs substrates. ©1995 American Institute of Physics.
点击下载:
PDF
(526KB)
返 回