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Theoretical x‐ray Bragg reflection widths and reflectivities of II‐VI semiconductors

 

作者: M. O. Mo¨ller,   R. N. Bicknell‐Tassius,   G. Landwehr,  

 

期刊: Journal of Applied Physics  (AIP Available online 1992)
卷期: Volume 72, issue 11  

页码: 5108-5116

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.352040

 

出版商: AIP

 

数据来源: AIP

 

摘要:

X‐ray Bragg reflection widths and reflectivities are calculated by the dynamical scattering theory. Results on the binary II‐VI semiconductors CdTe, HgTe, and the ternary alloys CdHgTe and CdZnTe are reported. For comparison, results on several III‐V compounds are also reported. The dependence of the reflection widths and reflectivities on alloy composition, wavelength, layer thickness, and material properties are discussed. Especially in alloys, interesting effects, such as drastic changes of the reflectivity depending on the alloy composition, appear. The behavior of the widths and reflectivities can be understood by the examination of the competing processes of absorption and extinction. The results from calculated intrinsic reflex profiles are compared with approximation formulas.  

 

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