Effect of the oxide‐desorption temperature on the substrate–epilayer interface charge in organometallic vapor‐phase epitaxy of GaAs
作者:
T. S. Kim,
L. A. Files,
L. K. Magel,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 15
页码: 2126-2128
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115606
出版商: AIP
数据来源: AIP
摘要:
We found that the use of relatively low temperatures during oxide desorption in organometallic vapor‐phase epitaxy of GaAs reduced the epilayer–substrate interface charge. No differences in Hall mobility were found between the samples grown with 550 and 650 °C desorption. O, C, Si, and S were the dominant impurities at the interface. Si and S, which are shallow donors, induce the interface‐charge accumulation. Low‐temperature desorption leaves oxygen at the surface, suppressing the activation of shallow dopants. A high level (≳1×1012/cm2) of Cl was detected on every GaAs substrate we measured, but its effect on epitaxy is not clear. ©1996 American Institute of Physics.
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