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Surface Space‐Charge Calculations for Semiconductors

 

作者: D. R. Frankl,  

 

期刊: Journal of Applied Physics  （AIP Available online 1960）
卷期: Volume 31, issue 10  

页码: 1752-1754

 

ISSN:0021-8979

 

年代: 1960

 

DOI:10.1063/1.1735440

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Approximation formulas for the surface excesses of carriers at large values of the reduced surface and bulk potentials are derived, and computed results are presented.

 

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