Electron and hole mobility intris(8‐hydroxyquinolinolato‐N1,O8) aluminum
作者:
R. G. Kepler,
P. M. Beeson,
S. J. Jacobs,
R. A. Anderson,
M. B. Sinclair,
V. S. Valencia,
P. A. Cahill,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 26
页码: 3618-3620
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113806
出版商: AIP
数据来源: AIP
摘要:
We have measured the drift mobility of electrons and holes in thin, vapor‐deposited films oftris(8‐hydroxyquinolinolato‐N1,O8) aluminum using a time of flight photoconductivity technique. The drift of mobility of both carriers is dispersive and strongly electric field and temperature dependent. At ambient temperature and an electric field of 4×105V cm−1, the effective mobility of electrons and holes is 1.4×10−6and 2×10−8 cm2 V−1 s−1, respectively, in a 400 nm thick sample. ©1995 American Institute of Physics.
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