To develop methods for the formation of metal-insulator-semiconductor (MIS) devices at low temperature, thinSiO2,SiOXNY,andSiNXfilms were reactively sputtered onto nonheated silicon substrates using different sputtering and ion assist parameters.SiO2was prepared by bombarding Si withAr+ions inAr/O2ambient whereasSiOXNYandSiNXfilms were prepared by bombardingSi3N4withN2+ions inN2/O2andAr/N2ambients, respectively. In addition, 300 eVN2+ion assistance was used during preparation ofSiNXfilms to enhance film nitriding. The 100–300 eVAr+ion assistance was also used during preparation ofSiO2to investigate the electrical damage effects caused by energetic ion bombardment during sputtering of the insulator film. The bulk and interfacial electrical properties of these films, which were assessed from current–voltage and high-frequency capacitance–voltage(C–V)measurements on MIS structures, indicate that the Si native oxide and type of anneal play a key role in determining the final film-interface quality.SiOXNYsputtered films exhibit poorerC–Velectrical characteristics with increasing nitrogen content resulting from the creation of positive fixed charge in the film and fast interfacial states. This damage can be suppressed using a native oxide but this increases the instability of the interface. Ion assistance ofSiO2films increased the level of electrical damage to the film in the bulk and in the vicinity of the interface. The majority of this damage manifests itself as fixed charge and trapping states in the film rather than fast interfacial states and leads to lower breakdown voltages and higher dielectric constants. Drift behavior of these films suggest that, with a native oxide in place, the former type of ion bombardment induced damage can be eliminated by a forming gas anneal although some deterioration of the electrical bulk properties remains.