The geometric structures of the GaAs(111) and (110) surfaces
作者:
S. Y. Tong,
W. N. Mei,
G. Xu,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1984)
卷期:
Volume 2,
issue 3
页码: 393-398
ISSN:0734-211X
年代: 1984
DOI:10.1116/1.582831
出版商: American Vacuum Society
关键词: SURFACE STRUCTURE;SURFACE STATES;GALLIUM ARSENIDES
数据来源: AIP
摘要:
We present results of a reconstruction model proposed for the (2×2) GaAs(111) surface, together with a reexamination of the (1×1) GaAs(110) surface structure. Our model indicates that the reconstruction mechanisms on the (111) and (110) surfaces are similar to one another. In both cases, surface electronic energies are lowered via orbital rehybridization between nearest neighbor Ga and As atoms with dangling bonds. Reexamination of the GaAs(110) surface structure confirms our previous result of a tilt angle of ω=27°±2° and rejects a recently proposed value of ω=7°.
点击下载:
PDF
(461KB)
返 回