We have investigated the effect of deposition conditions ofSnO2films, deposited by chemical vapor deposition using tin tetrachloride and tetramethyltin precursors, on the film properties. The type of precursor and the deposition temperature affect the morphology of the films. The structure of the films is determined by the deposition temperature: films deposited at low temperatures show a mixed SnO andSnO2phase. The processing temperature and type of substrate determine the impurity content in the films. Electrical properties (e.g., the carrier mobility) and optical properties of the films are affected by the structure and the impurity content in these layers. ©1999 American Institute of Physics.