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Tin phosphide as a phosphorus beam source for molecular beam epitaxy

 

作者: Young G. Chai,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 9  

页码: 985-987

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95472

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The use of Sn‐P is proposed as a new method of generating phosphorus beams for molecular beam epitaxy. This method generates almost pure P2beams with negligible by‐product. Theoretical predictions and experimental data are presented.

 

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