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Hydrogen ion motion in amorphous silicon solar cells at elevated temperatures

 

作者: D. E. Carlson,   K. Rajan,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 69, issue 10  

页码: 1447-1449

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117610

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Electric field‐enhanced degradation has been observed in amorphous silicon solar cells exposed to intense illumination (45–60 suns) at elevated temperatures (≳160 °C). The front tin oxide contacts of bothp–i–nandn–i–pcells darken significantly when a strong reverse bias is applied at elevated temperatures and under intense illumination. Compositional profiles of the cells show that a strong reverse bias causes a depletion of hydrogen near the contacts. These results are interpreted in terms of proton motion near thep/iinterface ofp–i–ncells and negative hydrogen ion motion near thei/ninterface. ©1996 American Institute of Physics.

 

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