Hydrogen ion motion in amorphous silicon solar cells at elevated temperatures
作者:
D. E. Carlson,
K. Rajan,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 10
页码: 1447-1449
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117610
出版商: AIP
数据来源: AIP
摘要:
Electric field‐enhanced degradation has been observed in amorphous silicon solar cells exposed to intense illumination (45–60 suns) at elevated temperatures (≳160 °C). The front tin oxide contacts of bothp–i–nandn–i–pcells darken significantly when a strong reverse bias is applied at elevated temperatures and under intense illumination. Compositional profiles of the cells show that a strong reverse bias causes a depletion of hydrogen near the contacts. These results are interpreted in terms of proton motion near thep/iinterface ofp–i–ncells and negative hydrogen ion motion near thei/ninterface. ©1996 American Institute of Physics.
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