Effect of scanning speed on the stability of the solidification interface during zone‐melting recrystallization of thin silicon films
作者:
Sharon M. Yoon,
Ioannis N. Miaoulis,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 1
页码: 316-318
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352142
出版商: AIP
数据来源: AIP
摘要:
The stability of the moving solidification interface of thin silicon films undergoing zone‐melting recrystallization with a graphite strip heater was examined numerically. Unstable growth of the interface occurred for scanning speeds ≥250 &mgr;m/s for typical processing conditions. The growth rate of the perturbed interface varied with scanning speed, showing a distinct increase at a velocity of 400 &mgr;m/s.
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