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Effect of scanning speed on the stability of the solidification interface during zone‐melting recrystallization of thin silicon films

 

作者: Sharon M. Yoon,   Ioannis N. Miaoulis,  

 

期刊: Journal of Applied Physics  (AIP Available online 1992)
卷期: Volume 72, issue 1  

页码: 316-318

 

ISSN:0021-8979

 

年代: 1992

 

DOI:10.1063/1.352142

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The stability of the moving solidification interface of thin silicon films undergoing zone‐melting recrystallization with a graphite strip heater was examined numerically. Unstable growth of the interface occurred for scanning speeds ≥250 &mgr;m/s for typical processing conditions. The growth rate of the perturbed interface varied with scanning speed, showing a distinct increase at a velocity of 400 &mgr;m/s.

 

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