Surface structure of GaAs with adsorbed Te
作者:
R. D. Feldman,
R. F. Austin,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 15
页码: 954-956
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97632
出版商: AIP
数据来源: AIP
摘要:
The surface structures that result from the adsorption of Te on (100) GaAs have been shown to affect the orientation of CdTe films on GaAs. Two structures are described here. A low‐temperature (6×1) surface leads to (100) film growth. At 580 °C, a new surface results which is characterized by ordering along directions 60° from [011¯] and [01¯1], and leads to (111) growth of CdTe. Both surface structure and the interaction of the group II element with the surface are believed to be important in determining the orientation of the film.
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