Two new electron paramagnetic resonance centers are reported, Si‐L8 and Si‐L9, which are identified with the stable and one of the four metastable configurations, respectively, of a multistable defect recently discovered by deep level transient capacitance spectroscopy in electron‐irradiated phosphorus‐doped silicon. Resolved31P hyperfine interactions and stress‐induced alignment effects are detected in the spectra which serve to confirm the identification as a Ci‐Pspair and lead to a model for the atomic structure in the stable configuration.