Oxygen adsorbed on GaAs(110) surfaces: The effect of temperature on band bending
作者:
K. Stiles,
D. Mao,
A. Kahn,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 4
页码: 1170-1173
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584273
出版商: American Vacuum Society
关键词: ADSORPTION;SURFACE STATES;IMPURITY STATES;SORPTIVE PROPERTIES;OXYGEN;GALLIUM ARSENIDES;ACCEPTORS;DEEP ENERGY LEVELS;TEMPERATURE EFFECTS;OXIDATION;CRYSTAL DEFECTS;LOW TEMPERATURE;GaAs
数据来源: AIP
摘要:
GaAs surfaces cleaved in ultrahigh vacuum and cooled to 100 K [low temperature (LT)] were exposed to molecular oxygen. Band bending as a function of exposure was measured with ultraviolet photoemission spectroscopy. Band bending on LTp‐GaAs is very small up to exposures>106L, whereas the same exposures give considerable band bending at room temperature (RT). Band bending on LTn‐GaAs is as fast as at RT. This situation is therefore opposite to that of metals/LT GaAs reported last year at this conference, but is analogous to that produced by Cl/GaAs at RT. These results can be interpreted in terms of simple adsorption of electronegative species which introduce an acceptor level deep in the GaAs gap. As for metals on LT GaAs, the nature of the surface states induced by the adsorption of single species dominates the position ofEFat low coverage. Metallicity dominates at high coverages of metals; oxidation‐induced defects dominate at RT or at higher exposures for O2/GaAs.
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