Silicon monolithic millimetre-wave integrated circuits
作者:
J.-F.Luy,
K.M.Strohm,
J.Buechler,
P.Russer,
期刊:
IEE Proceedings H (Microwaves, Antennas and Propagation)
(IET Available online 1992)
卷期:
Volume 139,
issue 3
页码: 209-216
年代: 1992
DOI:10.1049/ip-h-2.1992.0039
出版商: IEE
数据来源: IET
摘要:
Using Silicon as the substrate material, silicon monolithic millimetre-wave integrated circuit (SIMMWIC) oscillators and receivers are successfully realised. For the coplanar oscillators, a slot is used as the resonant structure in which a monolithically integrated IMPATT diode, selectively grown by silicon molecular beam epitaxy (Si-MBE), acts as the negative resistance device. Pulsed and CW operation of the planar oscillators is achieved in the 90 GHz region. The output power is radiated directly from the resonant slot. Complete receivers, with monolithic Schottky diodes together with the antenna, are integrated on a single chip. The suitability of the chips for near-range measurements is pointed out.
点击下载:
PDF
(957KB)
返 回