We reported enhanced oxygen precipitation in quenched Czochralski silicon crystals after solution annealing at 1270 °C in nitrogen or in dry oxygen [J. Appl. Phys.66, 3958 (1989)]. We attributed this phenomena to intrinsic point defects. However, hydrogen was introduced into samples during solution annealing at 1270 °C and aggregates of hydrogen were formed during quenching. This article examines hydrogen aggregates by Secco etching and transmission electron microscope. Hydrogen‐related aggregates are found to be related to enhanced oxygen precipitation.