The self‐aligned formation of CoSi2was achieved on the selective epitaxial growth (SEG) silicon layer on (001)Si inside 0.1–0.6 &mgr;m oxide openings prepared by electron beam lithography. The uniform, high quality SEG Si layer was grown by ultrahigh vacuum chemical vapor deposition at 560 °C with Si2H6. Self‐aligned CoSi2film without lateral growth of silicide was grown on the SEG Si layer by rapid thermal annealing at 700 °C in N2ambient. The successful integration of the self‐aligned CoSi2and SEG of Si processes promises to be a viable process technology for the future deep submicron devices. ©1996 American Institute of Physics.