Magnetically uniaxial epitaxial films of Eu2Er1Ga0.7Fe4.3O12and Er2Eu1Ga0.7Fe4.3O125–20‐&mgr; thick have been grown free of cracks from PbO·B2O3solutions on (110) and (111) Gd3Ga5O12substrates, respectively. Bubble propagating T‐Bar and Y‐Bar circuits of nickel‐cobalt‐phosphorus were electrolessly deposited on these films. Operation in excess of one hundred steps has been achieved in T‐Bar and Y‐Bar bubble domain shift registers. Details of the growth procedure, magnetic properties, and circuit preparation are presented.