Doping-density dependence of scanning tunneling spectroscopy on lightly doped silicon
作者:
H.-A. Lin,
R. Jaccodine,
M. S. Freund,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 16
页码: 1993-1995
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121243
出版商: AIP
数据来源: AIP
摘要:
The doping-density dependence of scanning tunneling spectroscopy on lightly doped hydrogen-terminated Si(100) (resistivities in the range of 0.2–12 &OHgr; cm) was investigated in air with and without illumination. The observed doping-density dependence is consistent with a generation model in which the changes in the three-dimensional depletion region, induced by a scanning tunneling microscopy tip, contributes to changes in the concentration of thermally and/or photogenerated carriers in lightly doped samples. These results suggest that scanning tunneling spectroscopy can be used to image variations in dopant density in lightly doped samples. ©1998 American Institute of Physics.
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