The influence of electron‐electron scattering processes on high‐field transport properties of electrons in GaAs, and the usefulness of a drifted Maxwellian approximation to the distribution function in analysis of devices in which these effects are important, have been studied. Monte Carlo simulations of transport both with and without electron‐electron scattering included are compared with drifted Maxwellian distribution functions over a range of doping and electric field values typical of submicron‐scale devices. Electron‐electron scattering is found to have a significant effect on the shape of the distribution function derived by MC simulation, but little effect on the average electron velocity. The degree of approximation involved in device analyses when the drifted Maxwellian is used instead of the correct distribution function is discussed.