Competitive adsorption effects in the metalorganic vapor phase epitaxy of GaN
作者:
O. Briot,
S. Clur,
R. L. Aulombard,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 14
页码: 1990-1992
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119764
出版商: AIP
数据来源: AIP
摘要:
The growth mechanisms of GaN grown on a GaN buffer deposited onto sapphire substrates are studied here. The growth rate was measured at different temperatures versus ammonia flow and was found to decrease with increasingNH3flow. This surprising behavior is modeled in terms of competitive adsorption of species on the growing surface. Very good agreement is obtained between the model and the experimental data. ©1997 American Institute of Physics.
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