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The mobility of implanted hydrogen and carbon in magnesium oxide single crystals

 

作者: U. Knipping,   S.I. T. Tsong,   G.W. Arnold,  

 

期刊: Radiation Effects  （Taylor Available online 1986）
卷期: Volume 97, issue 3-4  

页码: 209-214

 

ISSN:0033-7579

 

年代: 1986

 

DOI:10.1080/00337578608226009

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

MgO single crystals were implanted with 40 keV H2+and 60 keV C+ions. The diffusion behavior of the implant species in the temperature range 25–500°C was studied by SIMS depth-profiling. The1H+andl2C−SIMS profiles show practically no movement of implanted species. The results suggest that both hydrogen and carbon are tightly bound in the MgO, most likely as OH−and CO32-ions.

 

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