InGaAs/InP short‐period superlattices (SPSLs) grown by gas source molecular beam epitaxy (GSMBE) and by gas source migration enhanced epitaxy (GSMEE) on (001)InP substrates were investigated by x‐ray diffraction (XRD) and Raman scattering. XRD and Raman scattering results show that, although the average lattice mismatch relative to the InP substrate in GSMBE‐grown SPSL is close to zero, there may be some lattice parameter relaxation and substrate‐layer tilting caused by asymmetrical ordering of atomic layers and/or interchange between As and P atoms at interfaces. In GSMEE‐grown SPSLs, layer‐by‐layer growth is achieved and strained interface layers are formed. ©1995 American Institute of Physics.