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SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING

 

作者: A. Goetzberger,   V. Heine,   E. H. Nicollian,  

 

期刊: Applied Physics Letters  （AIP Available online 1968）
卷期: Volume 12, issue 3  

页码: 95-97

 

ISSN:0003-6951

 

年代: 1968

 

DOI:10.1063/1.1651913

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The experimentally observed distributions of surface state density versus energy is correlated with the existence of coulombic centers in the oxide. Single charges give rise to peaks in surface state density close to the band edges, deeper levels are introduced by two charges in close proximity.

 

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