Using high resolution x‐ray diffraction, it is shown that hot wall epitaxy is an appropriate growth technique in order to obtain perfect monocrystalline C60thin films with a thickness up to 150 nm. The full width at half‐maximum of rocking curves of the C60(111) reflex measured on such films is about 210 arcsec. Rocking curves of thicker films exhibit a complex shape, which is interpreted as a result of a change in the growth mode of C60films exceeding a critical thickness. ©1995 American Institute of Physics.