The recrystallization of ion implanted silicon layers. I. Pb-Ion implanted si
作者:
J.S. Williams,
C.E. Christodoulides,
W.A. Grant,
R. Andrew,
J.R. Brawn,
M. Booth,
期刊:
Radiation Effects
(Taylor Available online 1977)
卷期:
Volume 32,
issue 1-2
页码: 55-66
ISSN:0033-7579
年代: 1977
DOI:10.1080/00337577708237457
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Rutherford backscattering (RBS) and transmission electron microscopy (TEM) have been employed to investigate the annealing behaviour of Pb-implanted Si layers. The dose dependence of the post-anneal, residual disorder has been examined in considerable detail. Results indicate that the ability for the implanted Si layer to reorder as a single crystal decreases with increasing Pb concentration contained within the amorphous surface layers. The reordered Si layer is completely polycrystalline for Pb concentrations greater than a few atomic percent and the formation of this polycrystalline structure during annealing is accompanied by substantial Pb outdiffusion. Our observations lead us to suggest a step-by-step representation for Si recrystallization, where the reordered structure is dependent upon the local Pb concentration encountered as the regrowth process progresses from the bulk towards the Si suface.
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