Band‐edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells
作者:
Alan Kost,
H. C. Lee,
Yao Zou,
P. D. Dapkus,
Elsa Garmire,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 14
页码: 1356-1358
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.100714
出版商: AIP
数据来源: AIP
摘要:
We describe a novel approach to determining absorption coefficients in thin films using luminescence. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry–Perot effects, for example, and can be applied to a variety of materials. We examine the absorption edge for GaAs/AlGaAs multiple quantum well structures with quantum well widths ranging from 54 to 193 A˚. Urbach parameters and excitonic linewidths are tabulated.
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