Transient enhanced diffusion of Sb and B due to MeV silicon implants
作者:
D. J. Eaglesham,
T. E. Haynes,
H.-J. Gossmann,
D. C. Jacobson,
P. A. Stolk,
J. M. Poate,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 24
页码: 3281-3283
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119150
出版商: AIP
数据来源: AIP
摘要:
We measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeVSi+ion implants at very high doses(≈1016 cm−2).We expect the near-surface region of these implants to be vacancy rich, and we observe transient enhanced diffusion of Sb (the classic vacancy diffuser). The large enhancements imply a significant vacancy supersaturation (≈700at 740 °C). Double implantation of the high-dose MeV Si followed by a shallow (40 keV) Si implant and annealing produces a greatly reduced number of {311} defects compared to a 40 keV implant into virgin Si, again consistent with a vacancy-rich region in the near-surface region of an MeV implant. However, the shallow B marker layers also show transient enhanced diffusion for the same MeV implant under similar annealing conditions, implying that an interstitial supersaturation is present at the same time. We discuss possible mechanisms for a simultaneous supersaturation of both types of point defects. ©1997 American Institute of Physics.
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