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Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC

 

作者: J. Grillenberger,   N. Achtziger,   F. Gu¨nther,   W. Witthuhn,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 73, issue 25  

页码: 3698-3699

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.122867

 

出版商: AIP

 

数据来源: AIP

 

摘要:

To identify Ga- or Zn-related deep levels, deep level transient spectroscopy (DLTS) measurements were performed repeatedly during the elemental transmutation of67Gato67Zn.The radioactive isotope67Gawas recoil implanted intop-type 6H–SiC for radiotracer experiments. The DLTS spectra exhibit one peak of time-dependent height. It describes the increasing concentration of the daughter element Zn with the half life of the nuclear decay. Thus, one Zn-related level at 1.16 eV above the valence band edge is definitely identified. There is no deep level of Ga in the lower part of the band gap. ©1998 American Institute of Physics.

 

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