Radiotracer investigation of deep Ga- and Zn-related band gap states in 6H–SiC
作者:
J. Grillenberger,
N. Achtziger,
F. Gu¨nther,
W. Witthuhn,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 25
页码: 3698-3699
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122867
出版商: AIP
数据来源: AIP
摘要:
To identify Ga- or Zn-related deep levels, deep level transient spectroscopy (DLTS) measurements were performed repeatedly during the elemental transmutation of67Gato67Zn.The radioactive isotope67Gawas recoil implanted intop-type 6H–SiC for radiotracer experiments. The DLTS spectra exhibit one peak of time-dependent height. It describes the increasing concentration of the daughter element Zn with the half life of the nuclear decay. Thus, one Zn-related level at 1.16 eV above the valence band edge is definitely identified. There is no deep level of Ga in the lower part of the band gap. ©1998 American Institute of Physics.
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