AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress
作者:
Marek Osin´ski,
Joachim Zeller,
Pei‐Chih Chiu,
B. Scott Phillips,
Daniel L. Barton,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 7
页码: 898-900
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.116936
出版商: AIP
数据来源: AIP
摘要:
This study focused on the performance of commercial AlGaN/InGaN/GaN blue light emitting diodes (LEDs) under high current pulse conditions. The results of deep level transient spectroscopy (DLTS), thermally stimulated capacitance, and admittance spectroscopy measurements performed on stressed devices, showed no evidence of any deep‐level defects that may have developed as a result of high current pulses. Physical analysis of stressed LEDs indicated a strong connection between the high intrinsic defect density in these devices and the resulting mode of degradation. ©1996 American Institute of Physics.
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