Formation of self‐assembled InP islands on a GaInP/GaAs(311)A surface
作者:
C. M. Reaves,
R. I. Pelzel,
G. C. Hsueh,
W. H. Weinberg,
S. P. DenBaars,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 25
页码: 3878-3880
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117135
出版商: AIP
数据来源: AIP
摘要:
The coherent Stranski–Krastanov growth mode is used to create selfassembled InP islands on GaInP/GaAs(311)A surfaces. The resulting islands on (311)A surfaces have a base width distribution peaked in the range of 600–800 A˚ in contrast to a distribution peaked at 1200 A˚ for islands on (100) surfaces. In addition on the (311)A surfaces, there is a bimodal island height distribution peaked at 15 and 50 A˚. For the (311)A surfaces, the islands are significantly smaller and more dense (∼1010islands/cm2) than the islands formed on (100) surfaces (∼109islands/cm2). Despite these differences in the islands formed on the two surfaces, the growth occurs similarly for the two surfaces, with the formation of three different types of islands distinguished primarily by height. ©1996 American Institute of Physics.
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