Characteristics of LaNiO3(LNO) thin films deposited by rf sputtering process were compared with that prepared by pulsed laser deposition (PLD) process. rf sputtered LNO films were [200] preferentially oriented with a low surface resistivity (&rgr;s=0.55 m&OHgr; cm) and the PLD deposited films were [110] predominated with a slightly larger surface resistivity (&rgr;s=6.38 m&OHgr; cm). Using Pt coating as underneath layer markedly reduced the surface resistivity (&rgr;s=0.05 m&OHgr; cm) without modifying the texture characteristics of the LNO layers. PLZT films subsequently deposited on LNO layers inherited the texture characteristics of the underlying LNO layers. Ferroelectric properties of PLZT films were optimized when using LNO–Pt double layers as bottom electrodes. The remanent polarization and coercive force obtained werePr=14.9 &mgr;C/cm2andEc=3.5 kV/cm, respectively. ©1996 American Institute of Physics.