首页   按字顺浏览 期刊浏览 卷期浏览 Recombination Properties of Bombardment Defects in Semiconductors
Recombination Properties of Bombardment Defects in Semiconductors

 

作者: G. K. Wertheim,  

 

期刊: Journal of Applied Physics  (AIP Available online 1959)
卷期: Volume 30, issue 8  

页码: 1166-1174

 

ISSN:0021-8979

 

年代: 1959

 

DOI:10.1063/1.1735287

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The theory of recombination via defects having energy levels in the forbidden gap is reviewed. Emphasis is given to those aspects which complicate interpretation of lifetime data, such as the inherent difference between steady state and transient measurements, large‐signal behavior, competing recombination mechanisms, trapping, the possible existence of strongly temperature‐dependent cross sections, and the properties of multilevel defects. A summary of the known recombination properties of bombardment‐produced defects is given.

 

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