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How to learn the domain kinetics from the switching current data

 

作者: V.Ya. Shur,   E.L. Rumyantsev,   S.D. Makarov,   N.Yu. Ponomarev,   E.V. Nikolaeva,   E.I. Shishkin,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1999)
卷期: Volume 27, issue 1-4  

页码: 179-194

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228467

 

出版商: Taylor & Francis Group

 

关键词: ferroelectrics;domains;PZT thin films;switching current;fatigue process;epitaxial heterostructures

 

数据来源: Taylor

 

摘要:

We demonstrate how the mathematical treatment of the switching current data allows to characterize the variation of the domain structure during fatigue. Investigating PZT/YBCO heterostructures on SrTiO3and NdGaO3substrates we propose two different scenarios of fatigue-induced evolution of the domain structure. The essential role of as-grown domain structure is pointed out. It is shown that for higha-domain concentration the growth of the area occupied bya-domains prevails. For low “a-cratio” we obtain the competition between rejuvenation process and growth of the “frozen”c-domain area at the grain boundaries.

 

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