How to learn the domain kinetics from the switching current data
作者:
V.Ya. Shur,
E.L. Rumyantsev,
S.D. Makarov,
N.Yu. Ponomarev,
E.V. Nikolaeva,
E.I. Shishkin,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 27,
issue 1-4
页码: 179-194
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908228467
出版商: Taylor & Francis Group
关键词: ferroelectrics;domains;PZT thin films;switching current;fatigue process;epitaxial heterostructures
数据来源: Taylor
摘要:
We demonstrate how the mathematical treatment of the switching current data allows to characterize the variation of the domain structure during fatigue. Investigating PZT/YBCO heterostructures on SrTiO3and NdGaO3substrates we propose two different scenarios of fatigue-induced evolution of the domain structure. The essential role of as-grown domain structure is pointed out. It is shown that for higha-domain concentration the growth of the area occupied bya-domains prevails. For low “a-cratio” we obtain the competition between rejuvenation process and growth of the “frozen”c-domain area at the grain boundaries.
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