Degradation behaviour ofn-channel m.o.s.f.e.t.s operated at 77K
作者:
J.R.Davis,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1980)
卷期:
Volume 127,
issue 4
页码: 183-187
年代: 1980
DOI:10.1049/ip-i-1.1980.0038
出版商: IEE
数据来源: IET
摘要:
N-channel m.o.s. transistors have been operated at an ambient temperature of 77K withVDS=VGSto maximise the generation of high-energy (‘hot’) electrons in the channel. All the major transistor parameters exhibited substantial shifts which can be ascribed to two degradation mechanisms, namely the well known trapping of electrons in the gate oxide near the drain, and the generation of lattice defects in the semiconductor.
点击下载:
PDF
(600KB)
返 回