Early stages of plasma synthesis of diamond films
作者:
R. Meilunas,
M. S. Wong,
K. C. Sheng,
R. P. H. Chang,
R. P. Van Duyne,
期刊:
Applied Physics Letters
(AIP Available online 1989)
卷期:
Volume 54,
issue 22
页码: 2204-2206
ISSN:0003-6951
年代: 1989
DOI:10.1063/1.101124
出版商: AIP
数据来源: AIP
摘要:
The early stages of diamond film nucleation and growth in a microwave plasma have been studied in detail as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through Raman spectroscopy and scanning electron microscopy measurements. Using transmission infrared spectroscopy and x‐ray diffraction, it is found that a carbide layer is initially formed on the substrate prior to the growth of the diamond film. Furthermore, the final film morphology is also a strong function of the plasma starting condition, the gas composition, and the substrate temperature.
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