Barrier height reduction of the Schottky barrier diode using a thin highly doped surface layer
作者:
Ching‐Yuan Wu,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 9
页码: 4919-4922
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328365
出版商: AIP
数据来源: AIP
摘要:
The interfacial layer theory considering the effects of the interface states and surface fixed charges is developed for the barrier height of the Schottky barrier diode with a thin uniformly doped surface layer. It is shown that the origins of the barrier height modification using the highly doped surface layer are mainly due to the increase of the electric field at the contact surface and the change of the interface properties. Design criterion for the maximum width of the highly doped surface layer is derived and calculated in detail for nickel barrier metal onn‐type silicon with the specificed interfacial layer conditions. Comparisons between the the developed expression of the barrier height reduction with respect to the ion dose and the experimental data of Shannonetal. are made, which tend to support the proposed model.
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