Schottky barrier formation of Ag on GaAs(110)
作者:
R. Ludeke,
T.‐C. Chiang,
T. Miller,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1983)
卷期:
Volume 1,
issue 3
页码: 581-587
ISSN:0734-211X
年代: 1983
DOI:10.1116/1.582602
出版商: American Vacuum Society
关键词: schottky barrier diodes;silver;gallium arsenides;synthesis;photoemission;monolayers;fermi level
数据来源: AIP
摘要:
Photoemission studies of Ag deposits on cleavedn‐ andp‐type GaAs for coverages from ∼0.003 to 20 monolayers indicate clustered Ag growth and undetectable chemical interactions with the substrate. The position of the surface Fermi level changed throughout the deposit range. The data is inconsistent with most of the existing Schottky barrier models. The results are interpreted in terms of donor‐ and acceptorlike interface states which are characteristic of the clusters but modified by the screening at the interface. Values for the Schottky barrier of 0.89 eV onn‐type and 0.35 eV onp‐type material were obtained for the thickest coverage.
点击下载:
PDF
(845KB)
返 回