We report the effect of top electrode structure on the electrical properties of ferroelectric Pb(ZrxTi1-x)O3(PZT) capacitors. Samples with Ir/PZT/Ir or Ir/IrO2/PZT/Ir stacks were prepared using reactively sputtered Ir/IrO2(top) and Ir (bottom) electrodes and MOCVD-deposited PZT on TiAIN/SiO2/Si wafers. Capacitor structures were patterned by plasma etching of the top electrode and show evidence for transient fence formation. Electrical measurements of the capacitors showed good ferroelectric properties (2Prup to 38 μC/cm2, with leakage <10−6A/cm2) and low fatigue (<20% drop in Qsw) out to 8×1010cycles. Samples with top electrode structures containing IrO2gave higher 2Prvalues and lower pre-anneal fatigue, when compared with Ir-only top electrode samples. The sample with top electrode containing the thinnest IrO2layer showed slightly lower fatigue than the rest. We also briefly describe the use of these structures and etch methods in fabricating backend-integrated ferroelectric capacitors.