An infrared absorption spectrum has been obtained for the shallowA2acceptor level formed by neutron irradiation of Si:Ga. After a 600 °C anneal, absorption peaks were observed at 213.1, 244.9, and 286.9 cm.−1These peaks appear to correspond to lines 1, 2, and 4 of a group III‐like acceptor spectrum originating from a ground state with a 40.4‐meV binding energy. Hall effect measurements confirm the presence of an acceptor level at this energy.