作者: R.A.Warriner,
期刊: IEE Journal on Solid-State and Electron Devices (IET Available online 1977) 卷期: Volume 1, issue 3
页码: 92-96
年代: 1977
DOI:10.1049/ij-ssed.1977.0011
出版商: IEE
数据来源: IET
摘要:
A complete description of the important relaxation processes in gallium arsenide is presented. Included for the first time are the individual valley properties, combined with the electric field dependence of all relaxation times.
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