Atomic‐scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short‐period superlattices
作者:
Bernard Jusserand,
Francis Mollot,
Jean‐Marie Moison,
Guy Le Roux,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 6
页码: 560-562
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103646
出版商: AIP
数据来源: AIP
摘要:
We present Raman spectra obtained from very short period (a few atomic layers) GaAs/AlAs superlattices with asymmetrical unit cells containing two different GaAs wells. This allows us to analyze quantitatively for the first time the atomic‐scale component of the interface roughness. We demonstrate that it mainly originates at the GaAs on AlAs interface and strongly decreases with the growth temperature and the underlying AlAs layer thickness.
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