Implantation of group‐III and group‐V ions along [111] and [110] axes of silicon have been performed using a backscattering technique, and the depth profiles of implanted ions have been measured by theC‐Vmethod. The range of channeled Ga ions is the largest among the present data, and ap‐type layer of about 6 &mgr;m is obtained by implantation at only 150 keV. The carrier profiles of channeled Al and Ga ions with deep ranges do not show any distinguishable channeled peak contrasting with the B, P, and As channeling which gives a well‐defined peak. The electronic stopping cross section (Se) of channeled P ions agree well with the results of Eisen and Reddi, but in B channeling, the discrepancies of 10–20&percent; are observed amongSevalues obtained experimentally by three different groups.