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High-temperature type-II superlattice diode laser at&lgr;=2.9 &mgr;m

 

作者: W. W. Bewley,   E. H. Aifer,   C. L. Felix,   I. Vurgaftman,   J. R. Meyer,   C.-H. Lin,   S. J. Murry,   D. Zhang,   S. S. Pei,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 71, issue 25  

页码: 3607-3609

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.120455

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A 2.9 &mgr;m diode laser withInAs/GaSb/Ga0.75In0.25Sb/GaSbsuperlattice active region displays a maximum operating temperature of 260 K. At 200 K, the threshold current density is1.1 kA/cm2and the quantum efficiency is>15&percent;.The peak output power per facet exceeds 800 mW at 100 K and 200 mW at 200 K for a 0.05&percent; duty cycle. ©1997 American Institute of Physics.

 

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