Metal-semiconductor contacts
作者:
E.H.Rhoderick,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1982)
卷期:
Volume 129,
issue 1
页码: 1-14
年代: 1982
DOI:10.1049/ip-i-1.1982.0001
出版商: IEE
数据来源: IET
摘要:
A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made withp-njunctions.
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