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Metal-semiconductor contacts

 

作者: E.H.Rhoderick,  

 

期刊: IEE Proceedings I (Solid-State and Electron Devices)  (IET Available online 1982)
卷期: Volume 129, issue 1  

页码: 1-14

 

年代: 1982

 

DOI:10.1049/ip-i-1.1982.0001

 

出版商: IEE

 

数据来源: IET

 

摘要:

A review is given of our present knowledge of metal-semiconductor contacts. Topics covered include the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance. A short discussion is also given of practical contacts and their application in semiconductor technology, and a comparison is made withp-njunctions.

 

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