A review of our recent achievements in the growth of Hg1−xCdxTe by molecular‐beam epitaxy is presented here. The influences of the substrate temperature, the crystallographic orientation, and the nature of the substrate on the properties of Hg1−xCdxTe are discussed in detail. We show that to grow high‐quality material with good uniformity in terms of the alloy composition and the doping by crystal stoichiometry deviation, the substrate temperature should be between 180 °C andTmax. We report mobilities as high as 5.0×1205cm2 V−1 s−1forn‐type layers and 1.2×103cm2 V−1 s−1forp‐type layers, achieved by precisely controlling the growth parameters. We illustrate that the Hg condensation coefficient is influenced by the crystallographic orientation. Our results show that for Hg1−xCdxTe grown on both the (111)Band the (100) faces of CdTe or GaAs the Hall mobilities are very high and comparable. We report our important achievement of the successful growth of 2‐in.‐diam Hg1−xCdxTe films on GaAs(100), with Δx/x̄ as low as 0.7% forx̄=0.218 (Δxis the standard deviation andx̄ is the mean value), Δt/t̄ as low as 0.6% for the layer thickness, excellent uniformity in the doping, an high electron or hole mobility. This illustrates the excellent control that our group has achieved toward the growth of this material by molecular‐beam epitaxy.