Simulation of profile evolution in silicon reactive ion etching with re‐emission and surface diffusion
作者:
Vivek K. Singh,
Eric S. G. Shaqfeh,
James P. McVittie,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1992)
卷期:
Volume 10,
issue 3
页码: 1091-1104
ISSN:1071-1023
年代: 1992
DOI:10.1116/1.586084
出版商: American Vacuum Society
关键词: ETCHING;ION BEAMS;SILICON;SULFUR FLUORIDES;SURFACE REACTIONS;SIMULATION;Si
数据来源: AIP
摘要:
This article describes a model that simulates etching profiles in reactive ion etching. In particular, models are developed to explain the significant lateral etch rate that is observed in many etch profiles. The total etch rate is considered to consist of two superimposed components: an ion‐assisted rate and a purely ‘‘chemical’’ etch rate, the latter rate being due to etching by radicals in the absence of ion bombardment. The transport of radicals to the evolving interface is studied for two different transport mechanisms: re‐emission from the surface and diffusion along the surface. For the case of transport by surface re‐emission, a reactive sticking coefficient is defined for the radicals, and a formulation is developed to simulate etching for any value (between zero and unity) that this sticking coefficient may assume. When the sticking coefficient approaches either zero or unity, the method of characteristics is shown to be useful for profile simulation. Transport of radicals by surface diffusion is also investigated, and it is shown that the important dimensionless parameter governing profile evolution is the Damkohler number. The two models are compared to experiments performed on the etching of silicon in a SF6plasma, and the surface re‐emission model is shown to accurately predict the development of etching profiles.
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