Current‐voltage, capacitance‐voltage, and photoresponse measurements have been reexamined on the polar Ga‐(111)Aand P‐(∼(111))Bsurfaces ofn‐GaP for reactive (Al) and nonreactive (Ag) metals. Using a chemical etching/invacuodesorption cleaning sequence, nearly oxide‐freeAandBfaces could be obtained. For diodes formed on such surfaces, the intrinsic, face‐dependent variation inAandBSchottky barrier heights was less than 30 meV.