GaAs/(GaAl)As deep Zn‐diffused channeled‐substrate laser
作者:
H. K. Choi,
Shyh Wang,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 6
页码: 3600-3602
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332431
出版商: AIP
数据来源: AIP
摘要:
GaAs/(GaAl)As channeled‐substrate laser with deep Zn diffusion for tight current confinement is reported. It has extremely low threshold current (as low as 12 mA), high differential quantum efficiency, single lateral and longitudinal mode operation up to 10 mW. It hasT0of about 200 °C and the rate of threshold current change is only about 0.07 mA/°C from 10 to 70 °C.
点击下载:
PDF
(151KB)
返 回